sep.2000 cm a s(4 - mounting holes) b 3 - m6 nuts e t d q k k k f r qn g p h c l m t c measured point e2 e2 g2 c1 c2e1 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of one igbt having a reverse-connected super-fast recovery free-wheel di- ode and an anode-collector con- nected super-fast recovery free- wheel diode. all components and interconnects are i solated from the heat sinking baseplate, offering simplified system assembly and thermal management . features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking application: u brake ordering information: example: select the complete module number you desire from the table - i.e. CM150E3U-24H is a 1200v (v ces ), 150 ampere igbt module. current rating v ces type amperes volts (x 50) cm 150 24 dimensions inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.14 +0.04/-0.02 29 +1.0/-0.5 d 3.66 0.01 93.0 0.25 e 1.88 0.01 48.0 0.25 f 0.87 22.0 g 0.16 4.0 h 0.24 6.0 k 0.71 18.0 dimensions inches millimeters l 0.87 22.0 m 0.33 8.5 n 0.10 2.5 p 0.85 21.5 q 0.98 25.0 r 0.11 2.8 s 0.25 dia. 6.5 dia. t 0.6 15.15 outline drawing and circuit diagram mitsubishi igbt modules CM150E3U-24H high power switching use insulated type
sep.2000 mitsubishi igbt modules CM150E3U-24H high power switching use insulated type absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 150 amperes peak collector current (t j 150 c) i cm 300* amperes emitter current** (t c = 25 c) i e 150 amperes peak emitter current** i em 300* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 890 watts mounting torque, m6 main terminal C 3.5 ~ 4.5 n m mounting torque, m6 mounting C 3.5 ~ 4.5 n m weight C 400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage voltage i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 15ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v, t j = 25 c C 2.9 3.7 volts i c = 150a, v ge = 15v, t j = 125 c C 2.85 C volts total gate charge q g v cc = 600v, i c = 150a, v ge = 15v C 560 C nc emitter-collector voltage** v ec i e = 150a, v ge = 0v C C 3.2 volts emitter-collector voltage v fm i f = 150a, clamp diode part C C 3.2 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies CC22nf output capacitance c oes v ce = 10v, v ge = 0v C C 7.4 nf reverse transfer capacitance c res C C 4.4 nf resistive turn-on delay time t d(on) v cc = 600v, i c = 150a, C C 200 ns load rise time t r v ge1 = v ge2 = 15v, C C 250 ns switch turn-off delay time t d(off) r g = 2.1 w , resistive C C 300 ns times fall time t f load switching operation C C 350 ns diode reverse recovery time** t rr i e = 150a, di e /dt = -300a/ m sC C300ns diode reverse recovery charge** q rr i e = 150a, di e /dt = -300a/ m s C 0.82 C m c diode reverse recovery time t rr i f = 150a, clamp diode part C C 300 ns diode reverse recovery charge q rr di f /dt = -300a/ m s C 0.82 C m c **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
sep.2000 thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt C C 0.14 c/w thermal resistance, junction to case r th(j-c) d per fwdi C C 0.24 c/w thermal resistance, junction to case r th(j-c) clamp diode part C C 0.24 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C 0.020 C c/w mitsubishi igbt modules CM150E3U-24H high power switching use insulated type collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 200 100 50 0 v ge = 20v 12 11 8 t j = 25 o c 150 250 300 10 9 15 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 200 100 50 0 150 250 300 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 50 100 150 250 200 4 3 2 1 0 300 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 60a i c = 300a i c = 150a 1.0 1.5 2.0 2.5 3.0 3.5 10 1 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 emitter current, i e , (amperes) t j = 25 c collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies c oes c res
sep.2000 mitsubishi igbt modules CM150E3U-24H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.14 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.24 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 200 400 15 10 5 0 600 800 v cc = 600v v cc = 400v i c = 150a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 t rr i rr 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) di/dt = -300a/ m sec t j = 25 c collector current, i c , (amperes) 10 3 10 1 10 2 10 3 10 2 10 1 10 0 t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 2.1 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical)
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